PART |
Description |
Maker |
K7J641882M K7J643682M K7J641882M-FC16 K7J641882M-F |
72Mb M-die DDRII SRAM Specification 72Mb的M -模条DDRII规格的SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
GS8662DT19BD-300 GS8662DT19BD-333 GS8662DT19BD-400 |
72Mb SigmaQuad-II TM Burst of 4 SRAM JEDEC-standard pinout and package Dual Double Data Rate interface 72Mb SigmaQuad-II TMBurst of 4 SRAM
|
GSI Technology
|
GS8644Z18 GS8644Z18E-200I GS8644Z18E-225 GS8644Z18 |
72Mb NBT SRAMs 72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
ETC[ETC] GSI Technology
|
GS8644ZV18B GS8644ZV18E-166I GS8644ZV18B-250 GS864 |
72Mb NBT SRAMs 72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
GS8640Z18T-V GS8640Z18T-250V GS8640Z18T-250IV |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 72Mb流水线和流量,通过同步唑的SRAM 72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
GS8640Z18T-167I GS8640Z18T-200 GS8640Z18T-200I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 8 ns, PQFP100 72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
K7I643682M07 K7I641882M |
2Mx36 & 4Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
R1Q5A3618B R1Q5A3618BBG-33R R1Q5A3618BBG-40R R1Q5A |
36-Mbit DDRII SRAM 4-word Burst
|
Renesas Electronics Corporation
|
R1QFA7218AB R1QCA7218AB R1QDA7218AB R1QCA7236AB R1 |
72-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
IDT71P71104 IDT71P71204 |
(IDT71P71x04) 18Mb Pipelined DDRII SRAM Burst of 2
|
IDT
|
GS8662R08E-333 GS8662R08E-333I GS8662R08E-300 GS86 |
72Mb SigmaCIO DDR-II Burst of 4 SRAM
|
GSI[GSI Technology]
|